Split-CV mobility at low temperature operation of Ge pFinFETs fabricated with STI first and last process

Oliveira, Alberto V.Alberto V.OliveiraSimoen, EddyEddySimoenAgopian, Paula G.D.Paula G.D.AgopianMartino, Joao AJoao AMartinoMitard, JeromeJeromeMitardWitters, LiesbethLiesbethWittersLanger, RobertRobertLangerCollaert, NadineNadineCollaertThean, AaronAaronTheanClaeys, CorCorClaeys2021-10-232021-10-2320160268-1242https://imec-publications.be/handle/20.500.12860/27092Split-CV mobility at low temperature operation of Ge pFinFETs fabricated with STI first and last processJournal articlehttp://iopscience.iop.org/article/10.1088/0268-1242/31/11/114002/pdf