Proton irradiation induced lattice defects in Si diodes and their effects on device performance

Ohyama, HidenoriHidenoriOhyamaSimoen, EddyEddySimoenClaeys, CorCorClaeysVanhellemont, JanJanVanhellemontTakami, Y.Y.TakamiHayama, KiyoteruKiyoteruHayamaSunaga, H.H.SunagaKobayashi, K.K.Kobayashi2021-09-302021-09-301997https://imec-publications.be/handle/20.500.12860/2071Proton irradiation induced lattice defects in Si diodes and their effects on device performanceProceedings paper