Strain relaxation of SiGe buffers on Si and SOI wafers induced by He+ ion implantation and thermal annealing

Mantl, S.S.MantlHolländer, B.B.HolländerHüging, N.N.HügingLuysberg, M.M.LuysbergLenk, St.St.LenkHogg, S.M.S.M.HoggHerzog, H.-J.H.-J.HerzogHackbarth, T.T.HackbarthLoo, RogerRogerLooBauer, M.M.Bauer2021-10-152021-10-152003https://imec-publications.be/handle/20.500.12860/7860Strain relaxation of SiGe buffers on Si and SOI wafers induced by He+ ion implantation and thermal annealingOral presentation