1.5×10-9 Ω·cm² Contact Resistivity on Highly Doped Si:P Using Ge Pre-amorphization and Ti Silicidation

Yu, HaoHaoYuSchaekers, MarcMarcSchaekersRosseel, ErikErikRosseelPeter, AntonyAntonyPeterLee, Joon-GonJoon-GonLeeSong, Woo-BinWoo-BinSongDemuynck, StevenStevenDemuynckChiarella, ThomasThomasChiarellaRagnarsson, Lars-AkeLars-AkeRagnarssonKubicek, StefanStefanKubicekEveraert, Jean-LucJean-LucEveraertHoriguchi, NaotoNaotoHoriguchiBarla, KathyKathyBarlaKim, DaeyongDaeyongKimCollaert, NadineNadineCollaertThean, AaronAaronTheanDe Meyer, KristinKristinDe Meyer2021-10-232021-10-232015https://imec-publications.be/handle/20.500.12860/262211.5×10-9 Ω·cm² Contact Resistivity on Highly Doped Si:P Using Ge Pre-amorphization and Ti SilicidationProceedings paper