Time-dependent defect spectroscopy for characterization of border traps in metal-oxide-semiconductor transistors

Grasser, TiborTiborGrasserReisinger, HansHansReisingerWagner, Paul-JurgenPaul-JurgenWagnerKaczer, BenBenKaczer2021-10-182021-10-182010-121098-0121https://imec-publications.be/handle/20.500.12860/17185Time-dependent defect spectroscopy for characterization of border traps in metal-oxide-semiconductor transistorsJournal article