High-accuracy optical proximity correction modeling using advanced critical dimension scanning electron microscope-based contours in next-generation lithography

Hibino, DaisukeDaisukeHibinoShindo, HiroyukiHiroyukiShindoAbe, YuichiYuichiAbeHojyo, YutakaYutakaHojyoFenger, GermainGermainFengerDo, ThuyThuyDoKusnadi, IrIrKusnadiSturtevant, John L.John L.SturtevantVan de Kerkhove, JeroenJeroenVan de KerkhoveDe Bisschop, PeterPeterDe Bisschop2021-10-192021-10-192011-021537-1646https://imec-publications.be/handle/20.500.12860/19077High-accuracy optical proximity correction modeling using advanced critical dimension scanning electron microscope-based contours in next-generation lithographyJournal article