Atomically controlled processing for Si and Ge CVD epitaxial growth

Murota, JunichiJunichiMurotaYamamoto, YuchiYuchiYamamotoCostina, IoanIoanCostinaTillack, BerndBerndTillackLe Thanh, VinVinLe ThanhLoo, RogerRogerLooCaymax, MattyMattyCaymax2021-10-232021-10-232016https://imec-publications.be/handle/20.500.12860/27059Atomically controlled processing for Si and Ge CVD epitaxial growthProceedings paperhttp://ecst.ecsdl.org/content/72/2/71.abstract