Demonstration of metal-gated low Vt n-MOSFETs using a Poly-Si/TaN/Dy2O3/SiON gate stack with a scaled EOT value

Yu, HongYuHongYuYuSinganamalla, RaghunathRaghunathSinganamallaRagnarsson, Lars-AkeLars-AkeRagnarssonChang, VincentVincentChangCho, Hag-JuHag-JuChoMitsuhashi, RiichirouRiichirouMitsuhashiAdelmann, ChristophChristophAdelmannVan Elshocht, SvenSvenVan ElshochtLehnen, PeerPeerLehnenChang, Shou-ZenShou-ZenChangYin, K.M.K.M.YinSchram, TomTomSchramKubicek, StefanStefanKubicekDe Gendt, StefanStefanDe GendtAbsil, PhilippePhilippeAbsilDe Meyer, KristinKristinDe MeyerBiesemans, SergeSergeBiesemans2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/13253Demonstration of metal-gated low Vt n-MOSFETs using a Poly-Si/TaN/Dy2O3/SiON gate stack with a scaled EOT valueJournal article