Low-frequency noise assessment of border traps in Al2O3 capped DRAM peripheral MOSFETs

Simoen, EddyEddySimoenFederico, AntonioAntonioFedericoAoulaiche, MarcMarcAoulaicheRitzenthaler, RomainRomainRitzenthalerSchram, TomTomSchramArimura, HiroakiHiroakiArimuraCho, Moon JuMoon JuChoKauerauf, ThomasThomasKaueraufGroeseneken, GuidoGuidoGroesenekenHoriguchi, NaotoNaotoHoriguchiThean, AaronAaronTheanCrupi, FeliceFeliceCrupiSpessot, AlessioAlessioSpessotCaillat, ChirstianChirstianCaillatFazan, PierrePierreFazanNa, Hoon JooHoon JooNaSon, YunikYunikSonNoh, Kyung BongKyung BongNoh2021-10-222021-10-2220140268-1242https://imec-publications.be/handle/20.500.12860/24528Low-frequency noise assessment of border traps in Al2O3 capped DRAM peripheral MOSFETsJournal articlehttp://iopscience.iop.org/0268-1242/29/11/115015;jsessionid=0BCF20793210276891C842A073F91561.c1