SiGe or GeSn source/drain stressors on strained SiGe-channel pFETS: a TCAD study

Eneman, GeertGeertEnemanDe Keersgieter, AnAnDe KeersgieterWitters, LiesbethLiesbethWittersMitard, JeromeJeromeMitardVincent, BenjaminBenjaminVincentHikavyy, AndriyAndriyHikavyyLoo, RogerRogerLooHoriguchi, NaotoNaotoHoriguchiCollaert, NadineNadineCollaertThean, AaronAaronThean2021-10-212021-10-212013-040021-4922https://imec-publications.be/handle/20.500.12860/22312SiGe or GeSn source/drain stressors on strained SiGe-channel pFETS: a TCAD studyJournal article10.7567/JJAP.52.04CC01http://jjap.jsap.jp/link?JJAP/52/04CC01/