Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer

Alian, AlirezaAlirezaAlianRodriguez, RaulRaulRodriguezYadav, SachinSachinYadavPeralagu, UthayasankaranUthayasankaranPeralaguSibaja-Hernandez, ArturoArturoSibaja-HernandezPutcha, VamsiVamsiPutchaZhao, MingMingZhaoElKashlan, Rana Y.Rana Y.ElKashlanVermeersch, BjornBjornVermeerschYu, HaoHaoYuBury, ErikErikBuryKhaled, AhmadAhmadKhaledCollaert, NadineNadineCollaertParvais, BertrandBertrandParvais2023-04-122023-02-092023-04-1220221930-8876WOS:000904209900042https://imec-publications.be/handle/20.500.12860/41070Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN bufferProceedings paper10.1109/ESSDERC55479.2022.9947147978-1-6654-8497-8WOS:000904209900042TRANSPORT