High Ge content SGOI substrates obtained by the Ge condensation technique:a template for growth of strained epitaxial Ge

Souriau, LaurentLaurentSouriauTerzieva, ValentinaValentinaTerzievaVandervorst, WilfriedWilfriedVandervorstClemente, FrancescaFrancescaClementeBrijs, BertBertBrijsMoussa, AlainAlainMoussaCaymax, MattyMattyCaymaxLoo, RogerRogerLooMeuris, MarcMarcMeuris2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/12934High Ge content SGOI substrates obtained by the Ge condensation technique:a template for growth of strained epitaxial GeProceedings paper