Threshold voltage control in polysilicon or fully-silicided-Hf-based gate dielectric pMOSFETs using controlled lateral oxidation

Kaushik, VidyaVidyaKaushikRohr, ErikaErikaRohrHyun, SangjinSangjinHyunDe Gendt, StefanStefanDe GendtVan Elshocht, SvenSvenVan ElshochtDelabie, AnneliesAnneliesDelabieEveraert, Jean-LucJean-LucEveraertVeloso, AnabelaAnabelaVelosoBrus, StephanStephanBrusRagnarsson, Lars-AkeLars-AkeRagnarssonRichard, OlivierOlivierRichardCaymax, MattyMattyCaymaxHeyns, MarcMarcHeyns2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/10685Threshold voltage control in polysilicon or fully-silicided-Hf-based gate dielectric pMOSFETs using controlled lateral oxidationMeeting abstract