Growth and implementation of carbon-doped AlGaN layers for enhancement-mode HEMTs on 200 mm Si substrates

Su, JieJieSuPosthuma, NielsNielsPosthumaWellekens, DirkDirkWellekensSaripalli, YogaYogaSaripalliDecoutere, StefaanStefaanDecoutereArif, RonaldRonaldArifPapasouliotis, GeorgeGeorgePapasouliotis2021-10-232021-10-232016https://imec-publications.be/handle/20.500.12860/27358Growth and implementation of carbon-doped AlGaN layers for enhancement-mode HEMTs on 200 mm Si substratesProceedings paper