An effective model for analysing tunneling gate leakage currents through ultrathin oxides and high-k gate stacks from Si inversion layers

Govoreanu, BogdanBogdanGovoreanuBlomme, PieterPieterBlommeHenson, KirklenKirklenHensonVan Houdt, JanJanVan HoudtDe Meyer, KristinKristinDe Meyer2021-10-152021-10-152004https://imec-publications.be/handle/20.500.12860/8978An effective model for analysing tunneling gate leakage currents through ultrathin oxides and high-k gate stacks from Si inversion layersJournal article