Fin dimension influence on mechanical stressors in triple-gate SOI nMOSFETs

Buhler, RudolfRudolfBuhlerSimoen, EddyEddySimoenAgopian, PaulaPaulaAgopianClaeys, CorCorClaeysMartino, JoaoJoaoMartino2021-10-212021-10-212013https://imec-publications.be/handle/20.500.12860/22093Fin dimension influence on mechanical stressors in triple-gate SOI nMOSFETsProceedings paper