Properties of p-n-diodes made in polysilicon layers with intermediate grain size

Beaucarne, GuyGuyBeaucarnePoortmans, JefJefPoortmansCaymax, MattyMattyCaymaxNijs, JohanJohanNijsMertens, RobertRobertMertens2021-09-302021-09-301998https://imec-publications.be/handle/20.500.12860/2380Properties of p-n-diodes made in polysilicon layers with intermediate grain sizeOral presentation