Gate-all-around NWFETs vs. triple-gate FinFETs: junctionless vs. extensionless and conventional junction devices with controlled EWF modulation for multi-VT CMOS

Veloso, AnabelaAnabelaVelosoHellings, GeertGeertHellingsCho, Moon JuMoon JuChoSimoen, EddyEddySimoenDevriendt, KatiaKatiaDevriendtParaschiv, VasileVasileParaschivVecchio, EmmaEmmaVecchioTao, ZhengZhengTaoVersluijs, JankoJankoVersluijsSouriau, LaurentLaurentSouriauDekkers, HaroldHaroldDekkersBrus, StephanStephanBrusGeypen, JefJefGeypenLagrain, PieterPieterLagrainBender, HugoHugoBenderEneman, GeertGeertEnemanMatagne, PhilippePhilippeMatagneDe Keersgieter, AnAnDe KeersgieterFang, W.W.FangCollaert, NadineNadineCollaertThean, AaronAaronThean2021-10-232021-10-232015https://imec-publications.be/handle/20.500.12860/26117Gate-all-around NWFETs vs. triple-gate FinFETs: junctionless vs. extensionless and conventional junction devices with controlled EWF modulation for multi-VT CMOSProceedings paperhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7223652