Agopian, P. G. D.P. G. D.AgopianCarmo, G. J.G. J.CarmoMartino, J. A.J. A.MartinoSimoen, EddyEddySimoenPeralagu, UthayasankaranUthayasankaranPeralaguParvais, BertrandBertrandParvaisWaldron, NiamhNiamhWaldronCollaert, NadineNadineCollaert2022-02-252022-02-2520210038-1101WOS:000701908200005https://imec-publications.be/handle/20.500.12860/39157Gate dielectric material influence on DC behavior of MO(I)SHEMT devices operating up to 150 degrees CJournal article10.1016/j.sse.2021.108091WOS:000701908200005