Characterization of interface and oxide traps in Ge pMOSFETs based on DCIV technique

Maji, D.D.MajiCrupi, F.F.CrupiMagnone, P.P.MagnoneGiusi, G.G.GiusiPace, C.C.PaceSimoen, EddyEddySimoenRao, V.RamgopalV.RamgopalRao2021-10-182021-10-182009https://imec-publications.be/handle/20.500.12860/15790Characterization of interface and oxide traps in Ge pMOSFETs based on DCIV techniqueProceedings paper