Back and front interface related generation-recombination noise in buried-channel SOI p-MOSFET's

Lukyanchikova, N.N.LukyanchikovaPetrichuk, M.M.PetrichukGarbar, N.N.GarbarSimoen, EddyEddySimoenClaeys, CorCorClaeys2021-09-292021-09-291996https://imec-publications.be/handle/20.500.12860/1335Back and front interface related generation-recombination noise in buried-channel SOI p-MOSFET'sJournal article