Nano-beam diffraction investigation of the strain evolution in SiGe channel pFETs with gate first or gate last process

Favia, PaolaPaolaFaviaEneman, GeertGeertEnemanYamaguchi, ShinpeiShinpeiYamaguchiWitters, LiesbethLiesbethWittersBender, HugoHugoBender2021-10-202021-10-202012https://imec-publications.be/handle/20.500.12860/20671Nano-beam diffraction investigation of the strain evolution in SiGe channel pFETs with gate first or gate last processOral presentation