Development and analysis of thick GaN drift layers on 200 mm CTE-matched substrate for vertical device processing

Filho Goncalez, WalterWalterFilho GoncalezBorga, MatteoMatteoBorgaGeens, KarenKarenGeensCingu, DeepthiDeepthiCinguChatterjee, UrmimalaUrmimalaChatterjeeBanerjee, SourishSourishBanerjeeVohra, AnuragAnuragVohraHan, HanHanHanMinj, AlbertAlbertMinjHahn, HerwigHerwigHahnMarx, MatthiasMatthiasMarxFahle, DirkDirkFahleBakeroot, BenoitBenoitBakerootDecoutere, StefaanStefaanDecoutere2024-01-312023-11-192024-01-3120232045-2322WOS:001080555400041https://imec-publications.be/handle/20.500.12860/43162Development and analysis of thick GaN drift layers on 200 mm CTE-matched substrate for vertical device processingJournal article10.1038/s41598-023-42747-1WOS:001080555400041DISLOCATIONSLEAKAGEMEDLINE:37741914