Experimental analysis of a Ge-HfO2-TaN gate stack with a large amount of interface states

Croon, JeroenJeroenCroonKaczer, BenBenKaczerLujan, GuilhermeGuilhermeLujanKubicek, StefanStefanKubicekGroeseneken, GuidoGuidoGroesenekenMeuris, MarcMarcMeuris2021-10-162021-10-162005-04https://imec-publications.be/handle/20.500.12860/10266Experimental analysis of a Ge-HfO2-TaN gate stack with a large amount of interface statesProceedings paper