Direct mapping of strain in a strained silicon transistor by high-resolution electron microscopy

Hüe, FlorianFlorianHüeHytch, MartinMartinHytchBender, HugoHugoBenderHoudellier, FlorentFlorentHoudellierClaverie, AlainAlainClaverie2021-10-172021-10-1720080031-9007https://imec-publications.be/handle/20.500.12860/13901Direct mapping of strain in a strained silicon transistor by high-resolution electron microscopyJournal article