An investigation on border traps in III-V MOSFETs with an In0.53Ga0.47As channel

Ji, ZhigangZhigangJiZhang, XiongXiongZhangFranco, JacopoJacopoFrancoGao, RuiRuiGaoDuan, MengMengDuanZhang, Jian FuJian FuZhangZhang, Wei DongWei DongZhangKaczer, BenBenKaczerAlian, AliRezaAliRezaAlianLinten, DimitriDimitriLintenZhou, DaisyDaisyZhouCollaert, NadineNadineCollaertDe Gendt, StefanStefanDe GendtGroeseneken, GuidoGuidoGroeseneken2021-10-222021-10-2220150018-9383https://imec-publications.be/handle/20.500.12860/25432An investigation on border traps in III-V MOSFETs with an In0.53Ga0.47As channelJournal articlehttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7274328