Ultrathin GeSn p-channel MOSFETs grown directly on Si(111) substrate using solid phase epitaxy

Maeda, TatsuroTatsuroMaedaJevasuwan, WipakornWipakornJevasuwanHattori, HiroyukiHiroyukiHattoriUchida, NoriyukiNoriyukiUchidaMiura, ShuShuMiuraTanaka, MasatoshiMasatoshiTanakaSantos, Nuno D. M.Nuno D. M.SantosVantomme, AndreAndreVantommeLocquet, Jean-PierreJean-PierreLocquetLieten, Ruben R.Ruben R.Lieten2021-10-222021-10-2220150021-4922https://imec-publications.be/handle/20.500.12860/25590Ultrathin GeSn p-channel MOSFETs grown directly on Si(111) substrate using solid phase epitaxyJournal articlehttp://iopscience.iop.org/article/10.7567/JJAP.54.04DA07/pdf