A model determining optimal doping concentration and material's band gap of tunnel field-effect transistors

Vandenberghe, WilliamWilliamVandenbergheVerhulst, AnneAnneVerhulstKao, FrankFrankKaoDe Meyer, KristinKristinDe MeyerSoree, BartBartSoreeMagnus, WimWimMagnusGroeseneken, GuidoGuidoGroeseneken2021-10-202021-10-2020120003-6951https://imec-publications.be/handle/20.500.12860/21734A model determining optimal doping concentration and material's band gap of tunnel field-effect transistorsJournal article