Lee, KookjinKookjinLeeChoi, JunheeJunheeChoiKaczer, BenBenKaczerGrill, AlexanderAlexanderGrillLee, Jae WooJae WooLeeVan Beek, SimonSimonVan BeekBury, ErikErikBuryDiaz Fortuny, JavierJavierDiaz FortunyVaisman Chasin, AdrianAdrianVaisman ChasinLee, JaewooJaewooLeeChun, JunguJunguChunShin, Dong HoonDong HoonShinNa, JunhongJunhongNaCho, HyeranHyeranChoLee, Sang WookSang WookLeeKim, Gyu-TaeGyu-TaeKim2022-02-232022-02-2320211616-301XWOS:000635455800001https://imec-publications.be/handle/20.500.12860/39070Modeling and Understanding the Compact Performance of h-BN Dual-Gated ReS2 TransistorJournal article10.1002/adfm.202100625WOS:000635455800001FIELD-EFFECT TRANSISTORSLOW-FREQUENCY NOISEMONOLAYERDEPOSITIONELECTRONGROWTHDEVICELAYERSMOS2HFO2