Modifications of the three-dimensional transport properties of Si-doped Al0.25Ga0.75As exposed to CH 4/H2 reactive ion etching

Pereira, RicardoRicardoPereiraVan Hove, MarleenMarleenVan HoveVan Rossum, MarcMarcVan Rossum2021-09-292021-09-291996https://imec-publications.be/handle/20.500.12860/1410Modifications of the three-dimensional transport properties of Si-doped Al0.25Ga0.75As exposed to CH 4/H2 reactive ion etchingJournal article