Channel and near channel defects characterization in vertical InxGa1-xAs high mobility channels for future 3D NAND memory

Subirats, AlexandreAlexandreSubiratsCapogreco, ElenaElenaCapogrecoDegraeve, RobinRobinDegraeveArreghini, AntonioAntonioArreghiniVan den Bosch, GeertGeertVan den BoschLinten, DimitriDimitriLintenVan Houdt, JanJanVan HoudtFurnemont, ArnaudArnaudFurnemont2021-10-232021-10-232016https://imec-publications.be/handle/20.500.12860/27361Channel and near channel defects characterization in vertical InxGa1-xAs high mobility channels for future 3D NAND memoryProceedings paper