Defect characterization of polycrystalline silicon layers obtained by aluminum-induced crystallization and epitaxy

Van Gestel, DriesDriesVan GestelGordon, IvanIvanGordonCarnel, LodewijkLodewijkCarnelBeaucarne, GuyGuyBeaucarnePoortmans, JefJefPoortmans2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/13055Defect characterization of polycrystalline silicon layers obtained by aluminum-induced crystallization and epitaxyProceedings paperhttp://www.mrs.org/s_mrs/sec_subscribe.asp?CID=8749&DID=195279&action=detail