Tensile strained Ge layers grown on compositionally step-graded Ge1-xSnx buffer layers

Shimura, YosukeYosukeShimuraTakeuchi, ShotaroShotaroTakeuchiSakai, AkiraAkiraSakaiNakatsuka, OsamuOsamuNakatsukaOgawa, MasakiMasakiOgawaZaima, ShigeakiShigeakiZaima2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/12895Tensile strained Ge layers grown on compositionally step-graded Ge1-xSnx buffer layersProceedings paperhttp://www.murota.riec.tohoku.ac.jp/SiGeC2007/