Reduction of silicon dioxide interfacial layer to 4.6 Å EOT by Al remote scavenging in high-j/metal gate stacks on Si

Nichau, AlexanderAlexanderNichauSchafer, A.A.SchaferKnoll, L.L.KnollWirths, S.S.WirthsSchram, TomTomSchramRagnarsson, Lars-AkeLars-AkeRagnarssonSchubert, J.J.SchubertBernardy, P.P.BernardyLuysberg, M.M.LuysbergBesmehn, A.A.BesmehnBreuer, U.U.BreuerBucca, D.D.BuccaMantl, SSMantl2021-10-212021-10-2120130167-9317https://imec-publications.be/handle/20.500.12860/22860Reduction of silicon dioxide interfacial layer to 4.6 Å EOT by Al remote scavenging in high-j/metal gate stacks on SiJournal articlehttp://ac.els-cdn.com/S0167931713002839/1-s2.0-S0167931713002839-main.pdf?_tid=c0a6f756-9304-11e3-9aca-00000aab0f26&acdnat=13921