Photoluminescence of phosphorus atomic layer doped Ge grown on Si

Yamamoto, YujiYujiYamamotoNien, Li-WeiLi-WeiNienCapellini, GiovanniGiovanniCapelliniVirgilio, MicheleMicheleVirgilioCostina, IoanIoanCostinaSchubert, Markus AndreasMarkus AndreasSchubertSeifert, WilfriedWilfriedSeifertSrinivasan, AshwynAshwynSrinivasanLoo, RogerRogerLooScappucci, GiordanoGiordanoScappucciSabbagh, DiegoDiegoSabbaghHesse, AnneAnneHesseMurota, JunichiJunichiMurotaSchroeder, ThomasThomasSchroederTillack, BerndBerndTillack2021-10-242021-10-2420170268-1242https://imec-publications.be/handle/20.500.12860/29984Photoluminescence of phosphorus atomic layer doped Ge grown on SiJournal articlehttp://iopscience.iop.org/article/10.1088/1361-6641/aa8499