Ma, JigangJigangMaChai, ZhengZhengChaiZhang, Wei DongWei DongZhangZhang, Jian FuJian FuZhangMarsland, JohnJohnMarslandGovoreanu, BogdanBogdanGovoreanuDegraeve, RobinRobinDegraeveGoux, LudovicLudovicGouxKar, Gouri SankarGouri SankarKar2021-10-272021-10-2720190018-9383https://imec-publications.be/handle/20.500.12860/33487TDDB Mechanism in a-Si/TiO2 Nonfilamentary RRAM DeviceJournal articlehttps://ieeexplore.ieee.org/document/8556052