Variability study with CD-SEM metrology for STT-MRAM: correlation analysis between physical dimensions and electrical property of the memory element

Ohashi, TakeyoshiTakeyoshiOhashiYamaguchi, AtsukoAtsukoYamaguchiHasumi, KazuhisaKazuhisaHasumiInoue, OsamuOsamuInoueIkota, MasamiMasamiIkotaLorusso, GianGianLorussoDonadio, Gabriele LucaGabriele LucaDonadioYasin, FarrukhFarrukhYasinRao, SiddharthSiddharthRaoKar, Gouri SankarGouri SankarKar2021-10-242021-10-242017https://imec-publications.be/handle/20.500.12860/29104Variability study with CD-SEM metrology for STT-MRAM: correlation analysis between physical dimensions and electrical property of the memory elementProceedings paper10.1117/12.2257908