Difference in the nonlinear optical response of epitaxial Si on Ge(001) grown from SiH4 at 500 °C and from Si3H8 at 350 °C

Valev, VentsislavVentsislavValevLeys, FrederikFrederikLeysCaymax, MattyMattyCaymaxVerbiest, ThierryThierryVerbiest2021-10-172021-10-172008https://imec-publications.be/handle/20.500.12860/14593Difference in the nonlinear optical response of epitaxial Si on Ge(001) grown from SiH4 at 500 °C and from Si3H8 at 350 °COral presentation