Sahhaf, SaharSaharSahhafDegraeve, RobinRobinDegraeveSrividya, VydiaVydiaSrividyaDe Brabanter, K.K.De BrabanterSchram, TomTomSchramGilbert, MatthieuMatthieuGilbertVandervorst, WilfriedWilfriedVandervorstGroeseneken, GuidoGuidoGroeseneken2021-10-202021-10-202012-061530-4388https://imec-publications.be/handle/20.500.12860/21442HfSiO bulk trap density controls the initial Vth in nMOSFETsJournal article