Influence of dislocations in strained Si/relaxed SiGe layers on n/p-junctions in a metal-oxide-semiconductor field-effect transistor technology

Eneman, GeertGeertEnemanSimoen, EddyEddySimoenDelhougne, RomainRomainDelhougneVerheyen, PeterPeterVerheyenLoo, RogerRogerLooDe Meyer, KristinKristinDe Meyer2021-10-162021-10-162005-11https://imec-publications.be/handle/20.500.12860/10428Influence of dislocations in strained Si/relaxed SiGe layers on n/p-junctions in a metal-oxide-semiconductor field-effect transistor technologyJournal article