Charge trapping and dielectric reliability of SiO2/AI2O3 gate stacks with TiN electrodes

Kerber, AndreasAndreasKerberCartier, EduardEduardCartierDegraeve, RobinRobinDegraeveRoussel, PhilippePhilippeRousselPantisano, LuigiLuigiPantisanoKauerauf, ThomasThomasKaueraufGroeseneken, GuidoGuidoGroesenekenMaes, HermanHermanMaesSchwalke, U.U.Schwalke2021-10-152021-10-152003https://imec-publications.be/handle/20.500.12860/7727Charge trapping and dielectric reliability of SiO2/AI2O3 gate stacks with TiN electrodesJournal article