Low-Frequency Noise and Border Traps in Irradiated nMOS and pMOS Bulk Si FinFETs With SiO2/HfO2 Gate Dielectrics

Li, KanKanLiLuo, XuyiXuyiLuoRony, M. W.M. W.RonyGorchichko, MariiaMariiaGorchichkoHiblot, GaspardGaspardHiblotVan Huylenbroeck, StefaanStefaanVan HuylenbroeckJourdain, AnneAnneJourdainAlles, Michael L.Michael L.AllesReed, Robert A.Robert A.ReedZhang, En XiaEn XiaZhangFleetwood, Daniel M.Daniel M.FleetwoodSchrimpf, Ronald D.Ronald D.Schrimpf2023-07-042023-05-272023-07-0420230018-9499WOS:000975399300021https://imec-publications.be/handle/20.500.12860/41653Low-Frequency Noise and Border Traps in Irradiated nMOS and pMOS Bulk Si FinFETs With SiO2/HfO2 Gate DielectricsJournal article10.1109/TNS.2023.3239844WOS:0009753993000211/F NOISEBIAS DEPENDENCEUNIFIED MODELOXIDE-TRAPMOSTEMPERATUREDEFECTSDEVICES