Analysis of the pre-epi bake conditions on the defect creation in recessed Si1-xGex S/D junctions

Bargallo Gonzalez, MireiaMireiaBargallo GonzalezThomas, NicoleNicoleThomasSimoen, EddyEddySimoenVerheyen, PeterPeterVerheyenHikavyy, AndriyAndriyHikavyyLeys, FrederikFrederikLeysOkuno, YasutoshiYasutoshiOkunoVissouvanadin Soubaretty, BertrandBertrandVissouvanadin SoubarettyVan Daele, BennyBennyVan DaeleGeenen, LucLucGeenenLoo, RogerRogerLooClaeys, CorCorClaeysMachkaoutsan, VladimirVladimirMachkaoutsanTomasini, P.P.TomasiniThomas, S.G.S.G.ThomasLu, J.P.J.P.LuWeijtmans, J.W.J.W.WeijtmansWise, R.R.Wise2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/11699Analysis of the pre-epi bake conditions on the defect creation in recessed Si1-xGex S/D junctionsProceedings paper