Lifetime investigation of Si3N4/Al2O3 as gate dielectric for AlGaN/GaN MIS-HEMTs studied with Time Dependent Dielectric Breakdown

Zahid, MohammedMohammedZahidMarcon, DenisDenisMarconVan Hove, MarleenMarleenVan HoveWu, Tian-LiTian-LiWuDecoutere, StefaanStefaanDecoutere2021-10-202021-10-202012https://imec-publications.be/handle/20.500.12860/21905Lifetime investigation of Si3N4/Al2O3 as gate dielectric for AlGaN/GaN MIS-HEMTs studied with Time Dependent Dielectric BreakdownMeeting abstract