AlGaN/GaN/AlGaN double heterostructures on silicon substrates for high breakdown voltage field-effect transistors with low on-resistance

Visalli, DomenicaDomenicaVisalliVan Hove, MarleenMarleenVan HoveDerluyn, JoffJoffDerluynDegroote, StefanStefanDegrooteLeys, MaartenMaartenLeysCheng, KaiKaiChengGermain, MarianneMarianneGermainBorghs, GustaafGustaafBorghs2021-10-182021-10-1820090021-4922https://imec-publications.be/handle/20.500.12860/16501AlGaN/GaN/AlGaN double heterostructures on silicon substrates for high breakdown voltage field-effect transistors with low on-resistanceJournal article