Secondary impact ionization and device aging in deep submicron MOS devices with various transistor architectures

Marchand, B.B.MarchandCretu, B.B.CretuGhibaudo, G.G.GhibaudoBalestra, F.F.BalestraBlachier, D.D.BlachierLeroux, C.C.LerouxDeleonibus, S.S.DeleonibusGuegan, G.G.GueganReimbold, G.G.ReimboldKubicek, StefanStefanKubicekDe Meyer, KristinKristinDe Meyer2021-10-142021-10-142002https://imec-publications.be/handle/20.500.12860/6573Secondary impact ionization and device aging in deep submicron MOS devices with various transistor architecturesJournal article