Hot-carrier stress effects on the amplitude of random telegraph signals in small area Si p-MOSFETs

Simoen, EddyEddySimoenClaeys, CorCorClaeys2021-09-302021-09-301997https://imec-publications.be/handle/20.500.12860/2139Hot-carrier stress effects on the amplitude of random telegraph signals in small area Si p-MOSFETsJournal article