The cryogenic behaviour of metal-oxide-semiconductor transistors fabricated in high-resistivity silicon substrates

Simoen, EddyEddySimoenVanstraelen, GuyGuyVanstraelenClaeys, CorCorClaeys2021-09-292021-09-291994https://imec-publications.be/handle/20.500.12860/360The cryogenic behaviour of metal-oxide-semiconductor transistors fabricated in high-resistivity silicon substratesJournal article