Stress-induced positive charge in Hf-based gate dielectrics: impact on device performance and a framework for the defect

Zhao, C.Z.C.Z.ZhaoZhang, Jian F.Jian F.ZhangChang, Mo H.Mo H.ChangPeaker, Anthony R.Anthony R.PeakerHall, StephenStephenHallGroeseneken, GuidoGuidoGroesenekenPantisano, LuigiLuigiPantisanoDe Gendt, StefanStefanDe GendtHeyns, MarcMarcHeyns2021-10-172021-10-1720080018-9383https://imec-publications.be/handle/20.500.12860/14843Stress-induced positive charge in Hf-based gate dielectrics: impact on device performance and a framework for the defectJournal articlehttp://ieeexplore.ieee.org/iel5/16/4545026/04545056.pdf?tp=&arnumber=4545056&isnumber=4545026