Understanding the Origin of Metal Gate Work Function Shift and Its Impact on Erase Performance in 3D NAND Flash Memories

Ramesh, SivaSivaRameshAjaykumar, ArjunArjunAjaykumarRagnarsson, Lars-AkeLars-AkeRagnarssonBreuil, LaurentLaurentBreuilEl Hajjam, Gabriel KhalilGabriel KhalilEl HajjamKaczer, BenBenKaczerBelmonte, AttilioAttilioBelmonteNyns, LauraLauraNynsSoulie, Jean-PhilippeJean-PhilippeSoulievan den Bosch, GeertGeertvan den BoschRosmeulen, MaartenMaartenRosmeulen2023-08-042023-06-202023-08-0420212072-666XWOS:000699976100001https://imec-publications.be/handle/20.500.12860/41972Understanding the Origin of Metal Gate Work Function Shift and Its Impact on Erase Performance in 3D NAND Flash MemoriesJournal article10.3390/mi12091084WOS:000699976100001HIGH-KAPPA DIELECTRICSFUNCTION EXTRACTIONLEVELCAPACITANCEMEDLINE:34577727